AiT Semiconductor 2SC1623
The 2SC1623-L4, 2SC1623-L5, 2SC1623-L6, and 2SC1623-L7 are available in the SOT-23 package.| Part No. | 2SC1623 |
|---|---|
| Datasheet | 2SC1623 Download |
| Manufacturer |  AiT Semiconductor |
| Description | SILICON NPN EPITAXIAL PLANAR TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
ORDERING INFORMATION Package Type Part Number 2SC1623-L4 SOT-23 2SC1623-L5 2SC1623-L6 2SC1623-L7 SPQ 3,000pcs/Reel AiT provides all RoHS Compliant Products hFE CLASSIFICATION Rank L4 L5 L6 L7 Range 90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600FEATURES
● High DC current gain: hFE = 200Typ. (VCEO=50V, IC = 100 mA)● High Voltage: VCEO = 50V
● NPN silicon epitaxial planar transistor
APPLICATIONS
● Audio frequency general purpose amplifier. PINDESCRIPTION
PIN# 1 2 3DESCRIPTION
Base Emitter CollectorABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise specified. VCBO, Collector-Base Voltage 60 V VCEO, Collector-Emitter Voltage 50 V VEBO, Emitter-Base Voltage 5V IC, Collector Current-Continuous 100 mA PC, Collector Power Dissipation TJ, Junction Temperature 200 mW 150 °C Tstg, Storage Temperature -55 ~ +150 °C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in theELECTRICAL CHARACTERISTICS
are not implied.
