DESCRIPTION
The 2SC3357 is available in SOT-89 package. ORDERING INFORMATION Package Type Part Number 2SC3357-A 2SC3357-B SOT-89 2SC3357-C 2SC3357-D 2SC3357-E Note SPQ: 1,000pcs/Reel AiT provides all RoHS Compliant Products FEATURE High gain: S21e︱2 TYP. Value : 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value: 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.): TYP. Value: 6.5GHz @ VCE=10V，IC=20mA，f=1GHz PIN DESCRIPTION
PIN# 1 2 3 SOT-89 DESCRIPTION
BASE COLLECTOR EMITTER HFE CLASSIFICATION Classification A B C D E hFE 60~100 90~140 130~180 170~250 250~300 REV1.0 - JUL 2024 RELEASED - -1- AiT Semiconductor Inc. 2SC3357 TRANSISTORS NPN SILICON RF TRANSISTOR ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise specified VCBO, Collector-Base Breakdown Voltage 20V VCEO, Collector-Emitter Breakdown Voltage 12V VEBO, Emitter-Base Breakdown Voltage 3V IC, Collector Current 100mA PD, Collector Power Dissipation * 1.20W Tj, Junction Temperature 150℃ Tstg, Storage Temperature -65℃ ~ + 150℃ Stresses above may cause permanent damage to the device.
AiT Semiconductor
