AP10G03S
AP10G03S is 30V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP10G03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 30V ID =12 A
RDS(ON) < 12mΩ @ VGS=10V VDS = -30V ID =-9.8 A
Only
RDS(ON) < -25mΩ @ VGS=10V
Application
Use
Battery protection Load switch Uninterruptible power supply times
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS) ng AP10G03S
SOP-8
AP6G03S XXX YYYY
3000 he Absolute Maximum Ratings (TC=25℃unless otherwise noted) s Rating g Symbol
Parameter
N-Ch
P-Ch on VDS
Drain-Source Voltage
-30
T VGS
Gate-Source Voltage
±20
±20
ID@TA=25℃
For ID@TA=70℃
Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1
-9.8
-5.2
Pulsed Drain...