Datasheet Details
| Part number | AP10G03S |
|---|---|
| Manufacturer | APM |
| File Size | 2.40 MB |
| Description | 30V N+P-Channel Enhancement Mode MOSFET |
| Datasheet |
 AP10G03S Datasheet
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General Description
The AP10G03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 30V ID =12 A RDS(ON) < 12mΩ @ VGS=10V VDS = -30V ID =-9.8 A Only RDS(ON) < -25mΩ @ VGS=10V.