Datasheet4U.com

AP10G03S Datasheet PDF

APM AP10G03S

The AP10G03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP10G03S
Datasheet AP10G03S Download
Manufacturer
APM
Description 30V N+P-Channel Enhancement Mode MOSFET
Buy Stock & Price
AP10G03S datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 30V ID =12 A RDS(ON) < 12mΩ @ VGS=10V VDS = -30V ID =-9.8 A Only RDS(ON) < -25mΩ @ VGS=10V Application Use Battery protection Load switch Uninterruptible power supply times Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) ng AP10G03S SOP-8 AP6G03S XXX YYYY 3000 he

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) s Rating g Symbol Parameter N-Ch P-Ch on VDS Drain-Source Voltage 30 -30 T VGS Gate-Source Voltage ±20 ±20 ID@TA=25℃ For ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 12 -9.8 7 -5.2 IDM Pulsed Drain Current2 36 -26 EAS Single Pulse Avalanche Energy3 24 72 IAS PD@TA=25℃ Avalanche Current Total Power Dissipation4 22 -38 1.5 1.5 TSTG Storage Temperature Range -55 to 150 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 --- 85 RθJC Thermal Resistance Junction-Case1 --- 25 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W 1 AP10G...
AP10G03S page 2 preview AP10G03S page 3 preview