• Part: AP10G03S
  • Description: 30V N+P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: APM
  • Size: 2.40 MB
Download AP10G03S Datasheet PDF
APM
AP10G03S
AP10G03S is 30V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description The AP10G03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =12 A RDS(ON) < 12mΩ @ VGS=10V VDS = -30V ID =-9.8 A Only RDS(ON) < -25mΩ @ VGS=10V Application Use Battery protection Load switch Uninterruptible power supply times Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) ng AP10G03S SOP-8 AP6G03S XXX YYYY 3000 he Absolute Maximum Ratings (TC=25℃unless otherwise noted) s Rating g Symbol Parameter N-Ch P-Ch on VDS Drain-Source Voltage -30 T VGS Gate-Source Voltage ±20 ±20 ID@TA=25℃ For ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 -9.8 -5.2 Pulsed Drain...