AP30N03DF
AP30N03DF is 30V N-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP30N03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 30V ID =30 A
Only
RDS(ON) < 18mΩ @ VGS=10V
Application
Use
Battery protection Load switch Uninterruptible power supply times
Package Marking and Ordering Information g Product ID
Pack
Marking en AP30N03DF
PDFN3- 3-8L
AP30N03DF XXX YYYY sh Absolute Maximum Ratings (TC=25℃unless otherwise noted) ng Symbol
Parameter
To VDS
Drain-Source Voltage
Qty(PCS) 5000
Rating 30
VGS r ID@TC=25℃ Fo ID@TC=100℃
Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1
±20 30 18
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
PD@TC=25℃
Total Power Dissipation4
TSTG
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to...