DESCRIPTION
GENERAL FEATURES
VDS = 30V ID =30 A Only RDS(ON) < 18mΩ @ VGS=10V Application Use Battery protection Load switch Uninterruptible power supply times Package Marking and Ordering Information g Product ID Pack Marking en AP30N03DF PDFN3*3-8L AP30N03DF XXX YYYY sh ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) ng Symbol Parameter To VDS Drain-Source Voltage Qty(PCS) 5000 Rating 30 VGS r ID@TC=25℃ Fo ID@TC=100℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 ±20 30 18 IDM Pulsed Drain Current2 55 EAS Single Pulse Avalanche Energy3 22.1 IAS Avalanche Current 21 PD@TC=25℃ Total Power Dissipation4 20 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-ambient 1 75 RθJC Thermal Resistance Junction-Case1 6 AP30N03DF RVE3.0 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W 1 sales.Mr.wang13826508770 AP30N03DF 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
...
APM
