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AP30N03DF - 30V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

operation with gate voltages as low as 4.5V.

Battery protection or in other Switching application.

Features

  • VDS = 30V ID =30 A Only RDS(ON) < 18mΩ @ VGS=10V.

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Datasheet preview – AP30N03DF

Datasheet Details

Part number AP30N03DF
Manufacturer APM
File Size 1.13 MB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP30N03DF Datasheet
Additional preview pages of the AP30N03DF datasheet.

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Full PDF Text Transcription

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sales.Mr.wang13826508770 www.sztssd.com AP30N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP30N03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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