DESCRIPTION
GENERAL FEATURES
VDS = 650V ID =30A RDS(ON) < 270mΩ @ VGS=10V （Type：230mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP30N65MP TO-247-3L AP30N65MP XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Value VDSS Drain-Source Voltage (VGS = 0V) 650 ID@TC=25°C Continuous Drain Current 30 ID@TC=100°C Continuous Drain Current 16 IDM Pulsed Drain Current (note1) 100 VGS Gate-Source Voltage ±30 EAS PD TJ, Tstg Single Pulse Avalanche Energy (note2) Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range 1500 300 -55~+150 RthJC Thermal Resistance, Junction-to-Case 0.42 RthJA Thermal Resistance, Junction-to-Ambient 62.5 Qty(PCS) 360 Unit V A A A V mJ W ºC ºC/W ºC/W AP30N65MP REV1.0 永源微電子科技有限公司 1 AP30N65MP 650V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions...
APM
