AP30N65MP Datasheet | APM

Description The AP30N65MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 650V ID =30A RDS(ON) < 270mΩ @ VGS=10V （Type：230mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking TO-247-3L AP30N65MP XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value VDSS Drain-Source Voltage (VGS = 0V) ID@TC=25°C Continuous Drain Current ID@TC=100°C Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage ±30 EAS PD TJ, Tstg Single Pulse Avalanche Energy (note2) Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range 1500 300 -55~+150 Rth JC Thermal Resistance, Junction-to-Case Rth JA Thermal Resistance, Junction-to-Ambient...