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AP30N06NF Datasheet PDF

APM AP30N06NF

The AP30N06NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP30N06NF
Datasheet AP30N06NF Download
Manufacturer
APM
Description 60V N-Channel Enhancement Mode MOSFET
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AP30N06NF datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 60V ID =30A RDS(ON) <36mΩ @ VGS=10V(Type:28mΩ) Application LED lamp Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP30N06NF PDFN5X6-8L AP30N06NF XXX YYYY

ABSOLUTE MAXIMUM RATINGS

@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 30 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 17 IDM Pulsed Drain Current 74 IAS Avalanche Current 13 EAS Single Pulsed Avalanche Energy 22 PD@TC=25℃ TJ, TSTG RθJA RθJC Power Dissipation Operating and Storage Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 31.3 -55 to +175 25 4 Qty(PCS) 5000 Units V V A A A A mJ W ℃ ℃/W ℃/W AP30N06NF REV1.0 永源微電子科技有限公司 1 AP30N06NF 60V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit...
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