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AP30N06NF - 60V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP30N06NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 60V ID =30A RDS(ON).

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Datasheet preview – AP30N06NF

Datasheet Details

Part number AP30N06NF
Manufacturer APM
File Size 762.36 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP30N06NF Datasheet
Additional preview pages of the AP30N06NF datasheet.

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Full PDF Text Transcription

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AP30N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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