AP30N06NF
AP30N06NF is 60V N-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP30N06NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
VDS = 60V ID =30A
RDS(ON) <36mΩ @ VGS=10V(Type:28mΩ)
Application
LED lamp Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
PDFN5X6-8L
AP30N06NF XXX YYYY
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
±20
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current
Avalanche Current
Single Pulsed Avalanche Energy
PD@TC=25℃ TJ, TSTG RθJA RθJC
Power Dissipation Operating and Storage Temperature Range
Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1
31.3 -55 to +175
25 4
Qty(PCS)...