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AP3400EI - 30V N-Channel Enhancement Mode MOSFET

General Description

The AP3400EI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V ID =3.0A AP3400EI 30V N-Channel Enhancement Mode MOSFET RDS(ON).

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Datasheet Details

Part number AP3400EI
Manufacturer APM
File Size 396.10 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP3400EI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The AP3400EI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =3.0A AP3400EI 30V N-Channel Enhancement Mode MOSFET RDS(ON) <98mΩ @ VGS=4.5V （Type:80mΩ） Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack AP3400EI SOT23L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.