DESCRIPTION
GENERAL FEATURES
VDS = 30V ID =3.0A AP3400EI 30V N-Channel Enhancement Mode MOSFET RDS(ON) <98mΩ @ VGS=4.5V （Type:80mΩ） Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack AP3400EI SOT23L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 Marking 3400E Rating 30 ±12 3.0 1.8 9.6 1 -55 to 150 -55 to 150 125 80 Qty(PCS) 3000 Units V V A A A W ℃ ℃ ℃/W ℃/W AP2302BI RVE1.1 永源微電子科技有限公司 1 AP3400EI 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
