AP400N08TLG1 Datasheet | APM

Description 85V N-Channel Enhancement Mode MOSFET The AP400N08TLG1 uses advanced APM-SGTⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 85V ID =400A RDS(ON) <1.3mΩ @ VGS=10V (Type：1.0mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack TOLLL Marking AP400N08TLG1 XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Rating 85 ±20 400 220 960 2025 53.4 313 -55 to 175 -55 to 175 0.54 40 Qty(PCS) 2000 Units V V A A A m J A W ℃ ℃ ℃/W ℃/W AP400N08TLG1 REV1.0 永源微電子科技有限公司 85V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Test Conditions V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA l GSS Gate-body Leakage current VDS = 0V, VGS = ±20V IDSS Zero Gate Voltage Drain Current TJ=25°C Zero Gate Voltage Drain Current TJ=100°C VDS =85V, VGS =...