AP400N08TLG1 Datasheet PDF

APM AP400N08TLG1

The AP400N08TLG1 uses advanced APM-SGTⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application.

Part No.	AP400N08TLG1
Datasheet	AP400N08TLG1 Download
Manufacturer	APM
Description	85V N-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

AP400N08TLG1 85V N-Channel Enhancement Mode MOSFET

GENERAL FEATURES

VDS = 85V ID =400A RDS(ON) <1.3mΩ @ VGS=10V (Type：1.0mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack AP400N08TLG1 TOLLL Marking AP400N08TLG1 XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Rating 85 ±20 400 220 960 2025 53.4 313 -55 to 175 -55 to 175 0.54 40 Qty(PCS) 2000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP400N08TLG1 REV1.0 永源微電子科技有限公司 1 AP400N08TLG1 85V N-Channel Enhancement Mode MOSFET E...