AP40N10D Datasheet | APM

Description The AP40N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =40A RDS(ON) < 25mΩ @ VGS=10V (Type：18mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack TO-252-3L Marking AP40N10D XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Rating 100 ±20 40 18 100 160 53.4 27 -55 to 150 -55 to 150 4.65 62 Qty(PCS) 2500 Units V V A A A m J A W ℃ ℃ ℃/W ℃/W AP40N10D REV1.0 永源微電子科技有限公司 100V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA -...