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AP40G03NF - 30V N+P-Channel Enhancement Mode MOSFET

General Description

operation with gate voltages as low as 4.5V.

or in other Switching application.

Key Features

  • VDS = 30V ID =42A RDS(ON) < 10mΩ @ VGS=10V （Type：6.5mΩ） Only VDS = -30V ID =-38A RDS(ON) < 13mΩ @ VGS=-10V （Type：9.0mΩ） Use.

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Datasheet Details

Part number AP40G03NF
Manufacturer APM
File Size 1.49 MB
Description 30V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP40G03NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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sales.Mr.wang13826508770 www.sztssd.com Description AP40G03NF 30V N+P-Channel Enhancement Mode MOSFET The AP40G03NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =42A RDS(ON) < 10mΩ @ VGS=10V （Type：6.5mΩ） Only VDS = -30V ID =-38A RDS(ON) < 13mΩ @ VGS=-10V （Type：9.