AP40G03NF Datasheet | APM

Description 30V N+P-Channel Enhancement Mode MOSFET The AP40G03NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =42A RDS(ON) < 10mΩ @ VGS=10V （Type：6.5mΩ） Only VDS = -30V ID =-38A RDS(ON) < 13mΩ @ VGS=-10V （Type：9.0mΩ） Use Application Wireless charging Boost driver times Brushless motor ng Package Marking and Ordering Information e Product ID Pack Marking h AP40G03NF PDFN5- 6-8L AP40G03NF XXX YYYY gs Absolute Maximum Ratings (TC=25℃unless otherwise noted) n Symbol Parameter N-Ch To VDS Drain-Source Voltage P-Ch -30 VGS r ID@TC=25℃ Fo ID@TC=100℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 ±20 42 32.5 ±20 -38 -27.5 IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 -115 IAS PD@TC=25℃ Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range -55 to...