DESCRIPTION
AP40G03NF 30V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =42A RDS(ON) < 10mΩ @ VGS=10V （Type：6.5mΩ） Only VDS = -30V ID =-38A RDS(ON) < 13mΩ @ VGS=-10V （Type：9.0mΩ） Use Application Wireless charging Boost driver times Brushless motor ng Package Marking and Ordering Information e Product ID Pack Marking h AP40G03NF PDFN5*6-8L AP40G03NF XXX YYYY gs ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) n Symbol Parameter N-Ch To VDS Drain-Source Voltage 30 P-Ch -30 VGS r ID@TC=25℃ Fo ID@TC=100℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 ±20 42 32.5 ±20 -38 -27.5 IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 123 -115 289 378 IAS PD@TC=25℃ Avalanche Current Total Power Dissipation4 42 50 46 41.3 TSTG Storage Temperature Range -55 to 150 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 25 RθJC Thermal Resistance Junction-Case...
APM
