AP40H03DF2
AP40H03DF2 is 30V N+N-Channel Enhancement Mode MOSFET manufactured by APM.
Description
The AP40H03DF2 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
VDS=30V ID =40A
RDS(ON) < 10mΩ @ VGS=10V (Type:7.8mΩ)
Application
Battery protection
Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
DFN3- 3B-8L
AP40N03DF2 XXXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Drain-Source Voltage
Gate-Source Voltage
±20
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
PD@TC=25℃ TSTG
Total Power Dissipation Storage Temperature Range
137.5 -55 to 150
Operating Junction Temperature Range
-55 to 150
RθJA
Thermal Resistance Junction-Ambient...