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AP40H03DF2 - 30V N+N-Channel Enhancement Mode MOSFET

General Description

The AP40H03DF2 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS=30V ID =40A RDS(ON) < 10mΩ @ VGS=10V （Type：7.8mΩ）.

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Datasheet Details

Part number AP40H03DF2
Manufacturer APM
File Size 748.99 KB
Description 30V N+N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP40H03DF2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP40H03DF2 30V N+N-Channel Enhancement Mode MOSFET Description The AP40H03DF2 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =40A RDS(ON) < 10mΩ @ VGS=10V （Type：7.