DESCRIPTION
GENERAL FEATURES
VDS=30V ID =40A RDS(ON) < 10mΩ @ VGS=10V （Type：7.8mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP40H03DF2 DFN3*3B-8L AP40N03DF2 XXXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Rating VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 40 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 23 IDM Pulsed Drain Current2 120 PD@TC=25℃ TSTG Total Power Dissipation Storage Temperature Range 137.5 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 85 RθJC Thermal Resistance Junction-Case1 4 Qty(PCS) 5000 Units V V A A A W ℃ ℃ ℃/W ℃/W AP40H03DF2 REV1.0 永源微電子科技有限公司 1 AP40H03DF2 30V N+N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. BVDSS VGS(th) RDS(ON) Dr...
APM
