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AP90N12D - 120V N-Channel Enhancement Mode MOSFET

General Description

The AP90N12D uses advanced SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 7.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 120V ID =90A AP90N12D 120V N-Channel Enhancement Mode MOSFET RDS(ON) < 9.0mΩ @ VGS=10V （Type：7.5mΩ）.

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Datasheet Details

Part number AP90N12D
Manufacturer APM
File Size 722.70 KB
Description 120V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP90N12D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The AP90N12D uses advanced SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 120V ID =90A AP90N12D 120V N-Channel Enhancement Mode MOSFET RDS(ON) < 9.0mΩ @ VGS=10V （Type：7.