DESCRIPTION
GENERAL FEATURES
VDS = 120V ID =90A AP90N12D 120V N-Channel Enhancement Mode MOSFET RDS(ON) < 9.0mΩ @ VGS=10V （Type：7.5mΩ） Application Mobile phone fast charging Brushless motor Home appliance control board Package Marking and Ordering Information Product ID Pack AP90N12D TO-252-3L Marking AP90N12D XXXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Value VDS Drain source voltage 120 VGS Gate source voltage ±20 ID@TA=25℃ Continuous drain current1), TC=25 ℃ 90 ID@TA=70℃ Continuous drain current1), TC=75 ℃ 35 IDM Pulsed drain current2), TC=25 ℃ 270 PD Power dissipation3), TC=25 ℃ 160 EAS Single pulsed avalanche energy4) 125 Tstg，Tj Operation and storage temperature -55 to 150 RθJC Thermal resistance, junction-case 0.89 RθJA Thermal resistance, junction-ambient5) 62.5 Qty(PCS) 2500 Unit V V A A A W mJ ℃ ℃/W ℃/W AP90N12D REV1.0 永源微電子科技有限公司 1 AP90N12D 120V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted)...
APM
