AT49BV4096A Overview
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 µA.
AT49BV4096A Key Features
- 2.7V to 3.6V Read/Write Operation
- Fast Read Access Time
- 120 ns
- Internal Erase/Program Control
- Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 4K Words (8K bytes) Parameter Blocks
- One 240K Words (480K bytes) Main Memory Array Block
- Fast Sector Erase Time
- 10 seconds