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AT49BV4096AT - 4-Megabit (512K x 8/256K x 16) CMOS Flash Memory

Download the AT49BV4096AT datasheet PDF (AT49BV004 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 4-megabit (512k x 8/256k x 16) cmos flash memory.

Description

The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each.

Features

  • 2.7V to 3.6V Read/Write Operation.
  • Fast Read Access Time - 120 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Words (16K bytes) Boot Block with Programming Lockout.
  • Two 4K Words (8K bytes) Parameter Blocks.
  • One 240K Words (480K bytes) Main Memory Array Block.
  • Fast Sector Erase Time - 10 seconds.
  • Byte-by-Byte or Word-By-Word Programming - 30 µs Typical.
  • Hardware Data Protection.
  • DA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT49BV004-ATMEL.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ATMEL
  • AT49BV4096A - 4-Megabit (512K x 8/256K x 16) CMOS Flash Memory
  • AT49BV4096 - 4-Megabit (256K x 16) 3-volt Only CMOS Flash Memory
  • AT49BV001 - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001A - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001AN - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001ANT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001AT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001N - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Full PDF Text Transcription

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Features • 2.7V to 3.6V Read/Write Operation • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 240K Words (480K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Byte-by-Byte or Word-By-Word Programming - 30 µs Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low-Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each.
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