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AT49BV4096 Datasheet 4-megabit (256k X 16) 3-volt Only CMOS Flash Memory

Manufacturer: Atmel (now Microchip Technology)

General Description

The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read.

When deselected, the CMOS standby current is less than 50 µA.

Key Features

  • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns.
  • Internal Erase/Program Control.
  • Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 232K Words (464K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds.
  • Word-By-Word Programming - 10 µs/Word Hardware Data Protection.
  • DATA Polling For End Of Program Detec.

More Datasheets from Atmel (now Microchip Technology)

Part Number Description
AT49BV4096A 4-Megabit (512K x 8/256K x 16) CMOS Flash Memory
AT49BV4096AT 4-Megabit (512K x 8/256K x 16) CMOS Flash Memory
AT49BV001 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001A 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001AN 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001ANT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001AT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001N 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001NT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001T 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

AT49BV4096 Distributor