MGA-638P8 Datasheet PDF - AVAGO High Linearity Low Noise Amplifier Specs

MGA-638P8 - High Linearity Low Noise Amplifier

Datasheet Summary

Description

Avago Technologies’ MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA).

This LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 m GaAs Enhancement-mode pHEMT process.

Features

 High linearity performance.
 Low Noise Figure.
 GaAs E-pHEMT Technology[1].
 Low cost small package size.
 Integrated with active bias and option to access FET gate.
 Integrated power down control pin. Specifications 2.5 GHz; 4.8 V, 84 mA.
 17.3 dB Gain.
 0.87 dB Noise Figure.
 14 dB Input Return Loss.
 22.6 dBm Input IP3.
 22.2 dBm Output Power at 1 dB gain compression.

Datasheet Details

Part number	MGA-638P8
Manufacturer	AVAGO
File Size	161.28 KB
Description	High Linearity Low Noise Amplifier
Datasheet	MGA-638P8 Datasheet
Additional preview pages of the MGA-638P8 datasheet.

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Full PDF Text Transcription

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MGA-638P8 High Linearity Low Noise Amplifier Data Sheet Description Avago Technologies’ MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA). This LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 m GaAs Enhancement-mode pHEMT process. It is housed in the miniature 2.0 x 2.0 x 0.75 mm3 8-pin Dual-Flat-Non-Lead (DFN) package. The device is designed for optimum use from 2.5 GHz up to 4.0 GHz. The compact footprint and low profile coupled with low noise, high gain and high linearity make this an ideal choice as a low noise amplifier for cellular infrastructure applications such as LTE, GSM, CDMA, W-CDMA, CDMA2000 & TD-SCDMA. For optimum performance at lower frequency from 450 MHz up to 1.

Published: Nov 28, 2014 |