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AP1203GMT-HF Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: AP1203GMT-HF Halogen-Free Product Advanced Power Electronics Corp.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The PMPAK 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink.

□ S S S G PMPAK 5x6 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current 1 Rating 30 +20 45 16 13 180 36.7 5 29 -55 to 150 -55 to 150 Units V V A A A A W W mJ ℃ ℃ Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 3.4 25 Units ℃/W ℃/W Data & specifications subject to change without notice 1 200905216 Downloaded from Elcodis.

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