AP2302N datasheet by Advanced Power Electronics Corp.
| Part number | AP2302N |
|---|---|
| Datasheet | AP2302N_AdvancedPowerElectronics.pdf |
| File Size | 103.21 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL ENHANCEMENT MODE |
|
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SOT-23 G The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. 90 Unit ℃/W Data and specifications subject to change without notice 200503044 AP2302N @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 0.1 6...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
AP2302 | 3A DDR TERMINATION REGULATOR | BCD Semiconductor |
|
AP2302L | 2A DDR TERMINATION REGULATOR | BCD Semiconductor |
View all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP2302AGN-HF | N-channel Enhancement-mode Power MOSFET |
| AP2302AGN-HF-3 | N-channel Enhancement-mode Power MOSFET |
| AP2302GN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2302GN-HF | N-channel Enhancement mode Power MOSFET |
| AP2302GN-HF-3 | N-channel Enhancement mode Power MOSFET |
| AP2301AGN | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301BGN-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301EN-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
