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AP2302N - N-CHANNEL ENHANCEMENT MODE

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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AP2302AGN-HF N-channel Enhancement-mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP2302N Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 85mΩ 3.2A Description SOT-23 G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings www.DataSheet4U.com Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 20 ±12 3.2 2.6 10 1.38 0.