Datasheet Details
| Part number | AP4569GD |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 133.55 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4569GD_AdvancedPowerElectronics.pdf |
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Overview: .. AP4569GD Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package ▼ RoHS pliant PDIP-8 S1 G1 G2 S2 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 40V 52mΩ 4.8A -40V 90mΩ -3.
| Part number | AP4569GD |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 133.55 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4569GD_AdvancedPowerElectronics.pdf |
|
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|
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 ±20 4.8 3.9 20 2 0.016 -55 to 150 -55 to 150 P-channel -40 ±20 -3.8 -3 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.5 Unit ℃/W Data and specifications subject to change without notice 200711051-1/7 ..
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