AP4569GD Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 ±20 4.8 3.9 20 2 0.016 -55 to 150 -55 to 150 P-channel -40 ±20 -3.8 -3 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200711051-1/7 .. N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 40 1 - Typ. 0.03 6 6 2 3 7 5 16 3 490 70 50 1.3 Max. Units 52 75 3 1 25 ±100 10 780 2 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1m A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70o C) o VDS=VGS, ID=250u A VDS=5V, ID=4A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=±20V ID=4A VDS=30V VGS=4.5V VDS=20V ID=1A RG=3.3Ω,VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate...