AP4569GH
AP4569GH is N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 40 ±20 14 8.7 50 15.6 0.125 -55 to 150 -55 to 150 P-channel -40 ±20 -11 -6.6 -50
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case
3 3
Value Max. Max. 8 110
Units ℃/W ℃/W
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
200524051-1/7
..
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250u A
Min. 40 1
- Typ. 0.03 8 6 2 3 7 5 16 3 470 70 50 0.9
Max. Units 52 75 3 1 25 ±100 10 750 1.4 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Ω
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1m A
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=6A VGS=4.5V, ID=4A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150o C) o
VDS=VGS, ID=250u A VDS=10V, ID=6A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=±20V ID=6A VDS=30V VGS=4.5V VDS=20V ID=1A RG=3.3Ω,VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate...
