AP9938GEM-HF Datasheet | Advanced Power Electronics Corp

Description AP9938 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G2 S2 G1 S1 BVDSS RDS(ON) ID D1 G1 G2 S1 20V 18mΩ 8.5A D2 S2 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range 20 +8 8.5 6.8 30 2 -55 to 150 V V A A A W ℃ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201501072 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source...