AP9938GEYT-HF
AP9938GEYT-HF is DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description
PMPAK® 3x3
AP9938 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK ® 3x3 is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
BVDSS RDS(ON) ID
20V 16mΩ
10A
D1/D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating 20 +8 10 8 30 2.5
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 10 50
Unit ℃/W ℃/W
1 201210172
N-CH Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250u A VGS=4.5V, ID=6A
VGS=2.5V,...