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AP9938GEO-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP9938GEO-HF
Manufacturer Advanced Power Electronics
File Size 58.66 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Advanced Power Electronics Corp. AP9938GEO-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance ▼ Capable of 1.8V Gate Drive ▼ Optimal DC/DC Battery Application ▼ Halogen Free & RoHS Compliant Product G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 BVDSS RDS(ON) ID3 20V 18mΩ 6A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.
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