AP9938GEO-HF Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 20 +8 6 4.8 20 1 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 125 Unit ℃/W 1 201501154 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250u A VGS=4.5V, ID=6A VGS=2.5V, ID=4A VGS=1.8V, ID=2A VDS=VGS, ID=250u A VDS=5V, ID=6A VDS=16V, VGS=0V VGS=+8V, VDS=0V ID=6A VDS=10V VGS=4.5V VDS=10V ID=1A RG=3.3Ω VGS=5V VGS=0V VDS=10V f=1.0MHz f=1.0MHz - -...