AP9938GEY-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp
General Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6.
Full PDF Text Transcription for AP9938GEY-HF (Reference)
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Advanced Power Electronics Corp. AP9938GEY-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Lower on-resistance ▼ Surfa...
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OWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Lower on-resistance ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D1/D2 2928-8 G2 S2 G1 S1 Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. BVDSS RDS(ON) ID D1 G1 G2 S1 20V 16mΩ 7.5A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Vol
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