AP9938GEY-HF Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. BVDSS RDS(ON) ID D1 G1 G2 S1 20V 16mΩ 7.5A D2 S2 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation 20 V +8 V 7.5 A 6A 40 A 1.38 W TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201501273 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) gfs IDSS IGSS Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Qg Qgs Qgd td(on) tr td(off)...