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AP9975GM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9975 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number AP9975GM-HF
Manufacturer Advanced Power Electronics
File Size 52.38 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Advanced Power Electronics Corp. AP9975GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID 60V 21mΩ 7.6A Description AP9975 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 D1 G2 D2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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