AP9975GM
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.
G2 S2 G1 S1
BVDSS RDS(ON) ID
60V 21mΩ 7.6A
D1 D2
G1 G2 S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating 60 +25 7.6 6.1 30 2
0.016 -55 to 150 -55 to 150
Units V V A A A W
W/℃ ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201011182
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔT...
