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2N5109 Datasheet PDF

Advanced Power Technology 2N5109

The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. It is also suitable for oscillator and frequency-multiplier functions.
Part No. 2N5109
Datasheet 2N5109 Download
Manufacturer
Advanced Power Technology
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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2N5109 datasheet page 1 preview

FEATURES

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● Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39

DESCRIPTION

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APPLICATIONS

include amplifier; pre-driver, driver, and output stages.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 3.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75º C (1) Derate above 25º C 2.5 20 Watts mW/ º C Note 1. Total Device dissipation at TA = 25º C is 1 Watt. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. 2N5109

ELECTRICAL SPECIFICATIONS

(Tcase = 25°C) STATIC (off) Symbol BVCEO(sus) BVCER(sus) ICEO IEBO Test Conditions Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Emit...
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