2N5109 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Product Overview

Advanced Power Technology

Part number	2N5109
Manufacturer	Advanced Power Technology
File Size	303.27 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	2N5109 Datasheet
Additional preview pages of the 2N5109 datasheet.

The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment.

Applications include amplifier; pre-driver, driver, and output stages.

It is also suitable for oscillator and frequency-multiplier functions.

Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39.

2N5109 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
2N5109 - HIGH FREQUENCY TRANSISTOR (Motorola)
2N5109 - NPN RF TRANSISTOR (Central Semiconductor)
2N5109 - NPN SILICON HIGH FREQUENCY TRANSISTOR (ASI)
2N5109 - NPN Transistor (INCHANGE)
2N5102 - RF Power Devices (RCA Solid State)
2N5108 - NPN SILICON HIGH FREQUENCY TRANSISTOR (Advanced Semiconductor)
2N5108 - HIGH FREQUENCY TRANSISTOR (Motorola)
2N5108 - Silicon NPN Power Transistor (INCHANGE)
2N5114 - P-CHANNEL JFETS (Solitron Devices)

Other Datasheets by Advanced Power Technology

Published: Jun 4, 2007 |