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2N5109 Datasheet NPN Rf Transistor

Manufacturer: Central Semiconductor

Overview: 2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.

MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Continuous Base Current IB Power Dissipation PD Power Dissipation (TC=75°C) PD Operating and Storage Junction Temperature TJ, Tstg 40 20 3.0 400 400 1.0 2.5 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=35V, VBE=1.5V ICEV VCE=15V, VBE=1.5V, TC=150°C ICEO VCE=15V IEBO VEB=3.0V BVCBO IC=0.1mA 40 BVCER IC=5.0mA, RBE=10Ω 40 BVCEO IC=5.0mA 20 VCE(SAT) IC=100mA, IB=10mA hFE VCE=15V, IC=50mA 40 hFE VCE=5.0V, IC=360mA 5

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