Microsemi 2N5109
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | 2N5109 |
|---|---|
| Datasheet | 2N5109 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
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● Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39
DESCRIPTION
: Silicon NPN transistor, designed for VHF and UHF equipment.APPLICATIONS
include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 3.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75ºC (1) Derate above 25ºC 2.5 20 Watts mW/ ºC Note 1. Total Device dissipation at TA = 25ºC is 1 Watt. MSC1304.PDF 10-25-99 2N5109ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol BVCEO(sus) BVCER(sus) ICEO IEBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector Cutoff Current (VCE = 15 Vdc, IB = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 20 40 Value Typ.
