APT14050JVFR Datasheet | Advanced Power Technology

1400V 23A 0.500Ω POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. 2 T- "UL Recognized" ISOTOP ® - Fast Recovery Body Diode - Lower Leakage - Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM .. - Avalanche Energy Rated - Popular SOT-227 Package All Ratings: TC = 25°C unless otherwise specified. APT14050JVFR UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1400 23 92 ±30 ±40 694 5.56 -55 to 150 300 23 50 VGS VGSM PD TJ,TSTG TL IAR EAR EAS Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Volts Watts W/°C °C Amps m J (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State...