Full PDF Text Transcription for APT5022AVR (Reference)
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APT5022AVR 500V 21A 0.220Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET...
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enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-3 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-3 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT5022AVR UNIT Volts Amps 500 21 84 ±30 ±40 235 1.