MS1079 datasheet by Advanced Power Technology.
| Part number | MS1079 |
|---|---|
| Datasheet | MS1079_AdvancedPowerTechnology.pdf |
| File Size | 288.53 KB |
| Manufacturer | Advanced Power Technology |
| Description | RF & MICROWAVE TRANSISTORS |
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The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB munications. This device utilizes emitter ballasting for improved ruggedness and reliability. STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol BVCBO BVCEO BVEBO ICEO ICES hFE IC = 200mA IC = 200mA IE = 20mA VCE = 30V VCE = 55V VCE = 6V Test Conditions Min.
View all Advanced Power Technology datasheets
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|---|---|
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| MS1001 | RF & MICROWAVE TRANSISTORS |
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| MS1011 | RF AND MICROWAVE TRANSISTORS |
| MS1051 | RF & MICROWAVE TRANSISTORS |
| MS1226 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
