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MS1079 - RF & MICROWAVE TRANSISTORS

General Description

The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications.

This device utilizes emitter ballasting for improved ruggedness and reliability.

Key Features

  • 30 MHz 50 VOLTS POUT = 220 W GP = 13 dB.

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Datasheet Details

Part number MS1079
Manufacturer Advanced Power Technology
File Size 288.53 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1079 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MS1079 www.datasheet4u.com RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • 30 MHz 50 VOLTS POUT = 220 W GP = 13 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Value 110 55 4.0 12 320 +200 -65 to +150 Unit V V V A W °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.7 °C/W 053-7052 Rev - 10-2002 MS1079 www.datasheet4u.