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ULBM10 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI ULBM10 is Designed for PACKAGE STYLE .280 4L STUD

Key Features

  • Omnigold™ Metalization System B A 45° D C J.

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Datasheet Details

Part number ULBM10
Manufacturer Advanced Semiconductor
File Size 17.09 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet ULBM10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: • • • Omnigold™ Metalization System B A 45° D C J MAXIMUM RATINGS E I IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O 2.5 A 36 V 16 V 36 V 4.0 V 58 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 7.0 OC/W O O O O DIM A B C D E F G H I J K F G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.