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AM3414 - 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Overview

AiT Semiconductor

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AM3414 20V N-CHANNEL ENHANCEMENT MODE MOSFET by AiT Semiconductor - Datasheet Preview — Datasheet preview – AM3414

Datasheet Details

Part number	AM3414
Manufacturer	AiT Semiconductor
File Size	466.92 KB
Description	20V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	AM3414 Datasheet
Additional preview pages of the AM3414 datasheet.

Product details

Description

The AM3414 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate as 1.8V.

Features

20V/5.0A, RDS(ON) =30mΩ(typ. )@VGS =4.5V.
30V/4.5A, RDS(ON) =42mΩ(typ. )@VGS =2.5V.
30V/3.8A, RDS(ON) =50mΩ(typ. )@VGS =1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and Maximum DC current capability.
RoHs Compliant.
Available in SOT-23 package.

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Published: Jun 6, 2015 |