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AM3414 - 20V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

The AM3414 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate as 1.8V.

Key Features

  • 20V/5.0A, RDS(ON) =30mΩ(typ. )@VGS =4.5V.
  • 30V/4.5A, RDS(ON) =42mΩ(typ. )@VGS =2.5V.
  • 30V/3.8A, RDS(ON) =50mΩ(typ. )@VGS =1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • RoHs Compliant.
  • Available in SOT-23 package.

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Datasheet Details

Part number AM3414
Manufacturer AiT Semiconductor
File Size 466.92 KB
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM3414 Datasheet

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Full PDF Text Transcription (Reference)

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AiT Semiconductor Inc. www.ait-ic.com AM3414 SOT-23 MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The AM3414 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate as 1.8V. This device is suitable for use as a load switch or other general applications. The AM3414 is available in SOT-23 Package P-CHANNEL MOSFET FEATURES  20V/5.0A, RDS(ON) =30mΩ(typ.)@VGS =4.5V  30V/4.5A, RDS(ON) =42mΩ(typ.)@VGS =2.5V  30V/3.8A, RDS(ON) =50mΩ(typ.)@VGS =1.