AM3414 Description
The AM3414 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate as 1.8V. This device is suitable for use as a load switch or other general applications.
AM3414 Key Features
- 20V/5.0A, RDS(ON) =30mΩ(typ.)@VGS =4.5V
- 30V/4.5A, RDS(ON) =42mΩ(typ.)@VGS =2.5V
- 30V/3.8A, RDS(ON) =50mΩ(typ.)@VGS =1.8V
- Super high density cell design for extremely
- Exceptional on-resistance and Maximum DC
- RoHs pliant
- Available in SOT-23 package