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AM3415A - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • The AM3415A uses advanced trench technology to.
  • provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM.

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Datasheet Details

Part number AM3415A
Manufacturer AiT Semiconductor
File Size 802.36 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AM3415A Datasheet

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AiT Semiconductor Inc. www.ait-ic.com AM3415A MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM3415A uses advanced trench technology to  provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.   The AM3415A is available in SOT-23 package.   VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.