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AM3415 - -20V P-CHANNEL ENHANCEMENT MODE MOSFET

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AiT Semiconductor

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AM3415 -20V P-CHANNEL ENHANCEMENT MODE MOSFET by AiT Semiconductor - Datasheet Preview — Datasheet preview – AM3415

Datasheet Details

Part number	AM3415
Manufacturer	AiT Semiconductor
File Size	468.91 KB
Description	-20V P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	AM3415 Datasheet
Additional preview pages of the AM3415 datasheet.

Product details

Description

The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate voltage as 1.5V.

This device is suitable for use as a load switch or in applications.

Features

-20V/-4.0A, RDS(ON) =45mΩ(typ. )@VGS =-4.5V.
-20V/-4.0A, RDS(ON) =54mΩ(typ. )@VGS =-2.5V.
-20V/-2.0A, RDS(ON) =68mΩ(typ. )@VGS =-1.8V.
-20V/-1.0A, RDS(ON) =92mΩ(typ. )@VGS =-1.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and Maximum DC current capability.
ESD Protected : 3KV.
RoHs Compliant.
Available in SOT-23 package P-.

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Published: Jun 6, 2015 |