AM3415 Description
The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate voltage as 1.5V. This device is suitable for use as a load switch or in applications.
AM3415 Key Features
- 20V/-4.0A, RDS(ON) =45mΩ(typ.)@VGS =-4.5V
- 20V/-4.0A, RDS(ON) =54mΩ(typ.)@VGS =-2.5V
- 20V/-2.0A, RDS(ON) =68mΩ(typ.)@VGS =-1.8V
- 20V/-1.0A, RDS(ON) =92mΩ(typ.)@VGS =-1.5V
- Super high density cell design for extremely
- Exceptional on-resistance and Maximum DC
- ESD Protected : 3KV
- RoHs pliant
- Available in SOT-23 package