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AM3415 - -20V P-CHANNEL ENHANCEMENT MODE MOSFET

General Description

The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate voltage as 1.5V.

This device is suitable for use as a load switch or in applications.

Key Features

  • -20V/-4.0A, RDS(ON) =45mΩ(typ. )@VGS =-4.5V.
  • -20V/-4.0A, RDS(ON) =54mΩ(typ. )@VGS =-2.5V.
  • -20V/-2.0A, RDS(ON) =68mΩ(typ. )@VGS =-1.8V.
  • -20V/-1.0A, RDS(ON) =92mΩ(typ. )@VGS =-1.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • ESD Protected : 3KV.
  • RoHs Compliant.
  • Available in SOT-23 package P-.

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Datasheet Details

Part number AM3415
Manufacturer AiT Semiconductor
File Size 468.91 KB
Description -20V P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM3415 Datasheet

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Full PDF Text Transcription (Reference)

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AiT Semiconductor Inc. www.ait-ic.com AM3415 SOT-23 MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate voltage as 1.5V. This device is suitable for use as a load switch or in applications. The AM3415 is available in SOT-23 Package FEATURES  -20V/-4.0A, RDS(ON) =45mΩ(typ.)@VGS =-4.5V  -20V/-4.0A, RDS(ON) =54mΩ(typ.)@VGS =-2.5V  -20V/-2.0A, RDS(ON) =68mΩ(typ.)@VGS =-1.8V  -20V/-1.0A, RDS(ON) =92mΩ(typ.)@VGS =-1.