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AFC6601 Datasheet N&p-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFC6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

AFC6601 30V N & P Pair Enhancement Mode MOSFET

Key Features

  • N-Channel 30V/3.4A,RDS(ON)=46mΩ@VGS=10V 30V/3.0A,RDS(ON)=58mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=125mΩ@VGS=2.5V.
  • P-Channel -30V/-2.6A,RDS(ON)=110mΩ@VGS=-10.0V -30V/-2.0A,RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=150mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TSOP-6 package design Pin.

More Datasheets from Alfa-MOS

Part Number Description
AFC6602 N&P-Channel MOSFET
AFC6604 N&P-Channel MOSFET
AFC6606W N&P-Channel MOSFET
AFC6610W 100V N&P-Channel MOSFET
AFC6332 N&P-Channel MOSFET
AFC6332ES N&P-Channel MOSFET
AFC1016 N&P-Channel MOSFET
AFC1016E N&P-Channel MOSFET
AFC2517W N & P-Channel Enhancement Mode MOSFET
AFC2519W N & P-Channel Enhancement Mode MOSFET

AFC6601 Distributor