AFC6601 Description
AFC6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. AFC6601 30V N & P Pair Enhancement Mode MOSFET.
AFC6601 Key Features
- N-Channel 30V/3.4A,RDS(ON)=46mΩ@VGS=10V 30V/3.0A,RDS(ON)=58mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=125mΩ@VGS=2.5V
- P-Channel -30V/-2.6A,RDS(ON)=110mΩ@VGS=-10.0V -30V/-2.0A,RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=150mΩ@VGS=-2.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- TSOP-6 package design
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch