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AFC6601 - N&P-Channel MOSFET

This page provides the datasheet information for the AFC6601, a member of the AFC6601-Alfa N&P-Channel MOSFET family.

Description

AFC6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • N-Channel 30V/3.4A,RDS(ON)=46mΩ@VGS=10V 30V/3.0A,RDS(ON)=58mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=125mΩ@VGS=2.5V.
  • P-Channel -30V/-2.6A,RDS(ON)=110mΩ@VGS=-10.0V -30V/-2.0A,RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=150mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TSOP-6 package design Pin.

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Datasheet preview – AFC6601

Datasheet Details

Part number AFC6601
Manufacturer Alfa-MOS
File Size 659.26 KB
Description N&P-Channel MOSFET
Datasheet download datasheet AFC6601 Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFC6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. AFC6601 30V N & P Pair Enhancement Mode MOSFET Features  N-Channel 30V/3.4A,RDS(ON)=46mΩ@VGS=10V 30V/3.0A,RDS(ON)=58mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=125mΩ@VGS=2.5V  P-Channel -30V/-2.6A,RDS(ON)=110mΩ@VGS=-10.0V -30V/-2.0A,RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=150mΩ@VGS=-2.
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