AFC6606W Datasheet | Alfa-MOS

Description AFC6606W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-6L ) Features N-Channel 60V/2.8A,RDS(ON)=135mΩ@VGS=10V 60V/2.0A,RDS(ON)=145mΩ@VGS=4.5V P-Channel -60V/-1.8A,RDS(ON)=310mΩ@VGS=-10V -60V/-1.4A,RDS(ON)=340mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design Application LED Backlight DC/DC Converter Load Switch for Portable Applications Pin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Ordering Information Part Ordering No. Part Marking Package AFC6606WS26RG 06WYW SOT-23-6L ϡʳ 06W parts code ϡʳ Y year code ( 0...