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AFC6606W - N&P-Channel MOSFET

This page provides the datasheet information for the AFC6606W, a member of the AFC6606W-Alfa N&P-Channel MOSFET family.

Description

AFC6606W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • N-Channel 60V/2.8A,RDS(ON)=135mΩ@VGS=10V 60V/2.0A,RDS(ON)=145mΩ@VGS=4.5V P-Channel -60V/-1.8A,RDS(ON)=310mΩ@VGS=-10V -60V/-1.4A,RDS(ON)=340mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design.

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Datasheet Details

Part number AFC6606W
Manufacturer Alfa-MOS
File Size 0.95 MB
Description N&P-Channel MOSFET
Datasheet download datasheet AFC6606W Datasheet
Additional preview pages of the AFC6606W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFC6606W 60V N & P Pair Enhancement Mode MOSFET General Description AFC6606W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) Features N-Channel 60V/2.8A,RDS(ON)=135mΩ@VGS=10V 60V/2.0A,RDS(ON)=145mΩ@VGS=4.5V P-Channel -60V/-1.8A,RDS(ON)=310mΩ@VGS=-10V -60V/-1.4A,RDS(ON)=340mΩ@VGS=-4.
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