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AFC6604 - N&P-Channel MOSFET

This page provides the datasheet information for the AFC6604, a member of the AFC6604-Alfa N&P-Channel MOSFET family.

Description

AFC6604, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • N-Channel 20V/3.5A,RDS(ON)=52mΩ@VGS=4.5V 20V/2.6A,RDS(ON)=62mΩ@VGS=2.5V P-Channel -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Pin.

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Datasheet Details

Part number AFC6604
Manufacturer Alfa-MOS
File Size 1.01 MB
Description N&P-Channel MOSFET
Datasheet download datasheet AFC6604 Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFC6604, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. AFC6604 20V N & P Pair Enhancement Mode MOSFET Features N-Channel 20V/3.5A,RDS(ON)=52mΩ@VGS=4.5V 20V/2.6A,RDS(ON)=62mΩ@VGS=2.5V P-Channel -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=150mΩ@VGS=-2.
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