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AFC6602 - N&P-Channel MOSFET

Download the AFC6602 datasheet PDF. This datasheet also covers the AFC6602-Alfa variant, as both devices belong to the same n&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFC6602, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • N-Channel 30V/3.5A,RDS(ON)=75mΩ@VGS=10V 30V/2.6A,RDS(ON)=100mΩ@VGS=4.5V.
  • P-Channel -30V/-2.7A,RDS(ON)=135mΩ@VGS=-10.0V -30V/-2.1A,RDS(ON)=170mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TSOP-6 package design Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFC6602-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFC6602
Manufacturer Alfa-MOS
File Size 658.38 KB
Description N&P-Channel MOSFET
Datasheet download datasheet AFC6602 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFC6602, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. AFC6602 30V N & P Pair Enhancement Mode MOSFET Features  N-Channel 30V/3.5A,RDS(ON)=75mΩ@VGS=10V 30V/2.6A,RDS(ON)=100mΩ@VGS=4.5V  P-Channel -30V/-2.7A,RDS(ON)=135mΩ@VGS=-10.0V -30V/-2.1A,RDS(ON)=170mΩ@VGS=-4.
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