AFN123AS Overview
AFN123AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN123AS 100V N-Channel...
AFN123AS Key Features
- 100V/0.17A , RDS(ON)=5.8Ω@VGS=10V
- 100V/0.17A , R DS(ON)=6.8Ω@VGS=4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23 package design
- Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc
- High saturation current capability. Direct Logic-Level Interface: TTL/CMOS
- Battery Operated Systems
- Solid-State Relays