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AFN123WS - N-Channel Enhancement Mode MOSFET

Download the AFN123WS datasheet PDF. This datasheet also covers the AFN123WS-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 100V/0.17A , RDS(ON)=5.8Ω@VGS=10V 100V/0.17A , R DS(ON)=6.8Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Diode design.
  • in SOT-323 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN123WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN123WS
Manufacturer Alfa-MOS
File Size 609.14 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN123WS Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN123AS N-Channel MOSFET
AFN1298S N-Channel Enhancement Mode MOSFET
AFN1010S N-Channel Enhancement Mode MOSFET
AFN1012 N-Channel MOSFET
AFN1012E N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) AFN123WS 100V N-Channel Enhancement Mode MOSFET Features 100V/0.17A , RDS(ON)=5.8Ω@VGS=10V 100V/0.17A , R DS(ON)=6.8Ω@VGS=4.