AFN123WS - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN123WS, a member of the AFN123WS-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

Part number	AFN123WS
Manufacturer	Alfa-MOS
File Size	609.14 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN123WS Datasheet
Additional preview pages of the AFN123WS datasheet.

AFN123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

100V/0.17A , RDS(ON)=5.8Ω@VGS=10V 100V/0.17A , R DS(ON)=6.8Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Diode design.
in SOT-323 package design.

Other Datasheets by Alfa-MOS

Published: Dec 11, 2018 |