Alfa-MOS AFN2376
N-Channel Enhancement Mode MOSFET
| Part No. | AFN2376 |
|---|---|
| Datasheet | AFN2376 Download |
| Manufacturer |  Alfa-MOS |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN2376, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23-3L ) AFN2376 60V N-Channel Enhancement Mode MOSFETFEATURES
● 60V/5.4A,RDS(ON)=46mΩ@VGS=10V● 60V/3.8A,RDS(ON)=54mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23-3L package design Application
● Portable Equipment
● Battery Powered System
● Net Working System Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN2376S23RG 76YW SOT-23-3L ※ 76 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN2376S23RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp.
