AFN2376 Datasheet | Alfa-MOS

Description AFN2376, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) 60V N-Channel Enhancement Mode MOSFET Features - 60V/5.4A,RDS(ON)=46mΩ@VGS=10V - 60V/3.8A,RDS(ON)=54mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23-3L package design Application - Portable Equipment - Battery Powered System - Net Working System Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN2376S23RG 76YW SOT-23-3L ※ 76 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN2376S23RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.B Jan. 2024 Description Gate Source Drain Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 60V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise...