AFN2376 Overview
AFN2376, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFN2376 60V N-Channel...
AFN2376 Key Features
- 60V/5.4A,RDS(ON)=46mΩ@VGS=10V
- 60V/3.8A,RDS(ON)=54mΩ@VGS=4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23-3L package design
- Portable Equipment
- Battery Powered System
- Net Working System