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AFN5904W - N-Channel MOSFET

This page provides the datasheet information for the AFN5904W, a member of the AFN5904W-Alfa N-Channel MOSFET family.

Description

AFN5904W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • z 20V/4.5A,RDS(ON)=50mΩ@VGS=4.5V z 20V/3.6A,RDS(ON)=60mΩ@VGS=2.5V z 20V/2.4A,RDS(ON)=78mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN3X2-8L package design.

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Datasheet preview – AFN5904W

Datasheet Details

Part number AFN5904W
Manufacturer Alfa-MOS
File Size 426.61 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN5904W Datasheet
Additional preview pages of the AFN5904W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN5904W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3X2-8L ) AFN5904W 20V N-Channel Enhancement Mode MOSFET Features z 20V/4.5A,RDS(ON)=50mΩ@VGS=4.5V z 20V/3.6A,RDS(ON)=60mΩ@VGS=2.5V z 20V/2.4A,RDS(ON)=78mΩ@VGS=1.
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