AFN5908W Datasheet N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	AFN5908W
Manufacturer	Alfa-MOS
File Size	417.21 KB
Description	N-Channel MOSFET
Datasheet	AFN5908W AFN5908W-Alfa Datasheet (PDF)

General Description

AFN5908W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( DFN3X2-8L ) AFN5908W 20V N-Channel Enhancement Mode MOSFET

Key Features

z 20V/6.2A,RDS(ON)=30mΩ@VGS=4.5V z 20V/4.6A,RDS(ON)=35mΩ@VGS=2.5V z 20V/3.8A,RDS(ON)=45mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN3X2-8L package design.

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