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AFN5908W - N-Channel MOSFET

This page provides the datasheet information for the AFN5908W, a member of the AFN5908W-Alfa N-Channel MOSFET family.

Description

AFN5908W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • z 20V/6.2A,RDS(ON)=30mΩ@VGS=4.5V z 20V/4.6A,RDS(ON)=35mΩ@VGS=2.5V z 20V/3.8A,RDS(ON)=45mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN3X2-8L package design.

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Datasheet preview – AFN5908W

Datasheet Details

Part number AFN5908W
Manufacturer Alfa-MOS
File Size 417.21 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN5908W Datasheet
Additional preview pages of the AFN5908W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN5908W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3X2-8L ) AFN5908W 20V N-Channel Enhancement Mode MOSFET Features z 20V/6.2A,RDS(ON)=30mΩ@VGS=4.5V z 20V/4.6A,RDS(ON)=35mΩ@VGS=2.5V z 20V/3.8A,RDS(ON)=45mΩ@VGS=1.
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