Alfa-MOS AFN6424S
30V N-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
AFN6424S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( TSOP-6 ) AFN6424S 30V N-Channel Enhancement Mode MOSFETFEATURES
● 30V/5.0A,RDS(ON)=38mΩ@VGS=4.5V● 30V/4.0A,RDS(ON)=50mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS (ON)
● TSOP-6 package design Application
● Power Management in Note book
● LED Display
● DC-DC System
● LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D
DESCRIPTION
Drain Drain Gate Source Drain Drain Ordering Information Part Ordering No. Part Marking Package AFN6424STS6RG 4SYW TSOP-6 ※ 4S parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN6424STS6RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.B Sep. 2022 U...