Datasheet4U Logo Datasheet4U.com

AFN6424S - 30V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN6424S, a member of the AFN6424S-Alfa 30V N-Channel Enhancement Mode MOSFET family.

Description

AFN6424S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/5.0A,RDS(ON)=38mΩ@VGS=4.5V.
  • 30V/4.0A,RDS(ON)=50mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TSOP-6 package design.

📥 Download Datasheet

Datasheet preview – AFN6424S

Datasheet Details

Part number AFN6424S
Manufacturer Alfa-MOS
File Size 331.03 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN6424S Datasheet
Additional preview pages of the AFN6424S datasheet.

📁 Similar Datasheet

Other Datasheets by Alfa-MOS

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFN6424S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6424S 30V N-Channel Enhancement Mode MOSFET Features  30V/5.0A,RDS(ON)=38mΩ@VGS=4.5V  30V/4.0A,RDS(ON)=50mΩ@VGS=2.5V  Super high density cell design for extremely low RDS (ON)  TSOP-6 package design Application  Power Management in Note book  LED Display  DC-DC System  LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain Ordering Information Part Ordering No.
Published: |