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AFN6452S - N-Channel MOSFET

This page provides the datasheet information for the AFN6452S, a member of the AFN6452S-Alfa N-Channel MOSFET family.

Description

AFN6452S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 100V/20A,RDS(ON)=20mΩ@VGS=10V z 100V/15A,RDS(ON)=24mΩ@VGS=7V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design.

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Datasheet preview – AFN6452S

Datasheet Details

Part number AFN6452S
Manufacturer Alfa-MOS
File Size 400.82 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6452S Datasheet
Additional preview pages of the AFN6452S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN6452S 100V N-Channel Enhancement Mode MOSFET General Description AFN6452S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 100V/20A,RDS(ON)=20mΩ@VGS=10V z 100V/15A,RDS(ON)=24mΩ@VGS=7V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z Synchronous Rectifier z Power Supplies z LED TV Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No.
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