AFN6452S Datasheet | Alfa-MOS

Description AFN6452S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 100V/20A,RDS(ON)=20mΩ@VGS=10V z 100V/15A,RDS(ON)=24mΩ@VGS=7V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z Synchronous Rectifier z Power Supplies z LED TV Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package AFN6452SFN568RG 6452S DFN5X6-8L ※ 6452S : Parts Code ※ YYMMDD : Date Code ※ AFN6452SFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp....