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AFN6452S Datasheet N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology AFN6452S 100V N-Channel Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN6452S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( DFN5X6-8L )

Key Features

  • z 100V/20A,RDS(ON)=20mΩ@VGS=10V z 100V/15A,RDS(ON)=24mΩ@VGS=7V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design.

AFN6452S Distributor