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AFN6800WS - N-Channel MOSFET

This page provides the datasheet information for the AFN6800WS, a member of the AFN6800WS-Alfa N-Channel MOSFET family.

Description

AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/4.0A,RDS(ON)=34mΩ@VGS=10V 30V/3.2A,RDS(ON)=38mΩ@VGS=4.5V 30V/2.5A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design.

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Datasheet Details

Part number AFN6800WS
Manufacturer Alfa-MOS
File Size 669.50 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6800WS Datasheet
Additional preview pages of the AFN6800WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6800WS 30V N-Channel Enhancement Mode MOSFET Features 30V/4.0A,RDS(ON)=34mΩ@VGS=10V 30V/3.2A,RDS(ON)=38mΩ@VGS=4.5V 30V/2.5A,RDS(ON)=42mΩ@VGS=2.
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