Download the AFN6800WS datasheet PDF.
This datasheet also covers the AFN6800WS-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Key Features
30V/4.0A,RDS(ON)=34mΩ@VGS=10V 30V/3.2A,RDS(ON)=38mΩ@VGS=4.5V 30V/2.5A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design.
Full PDF Text Transcription for AFN6800WS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AFN6800WS. For precise diagrams, and layout, please refer to the original PDF.
Alfa-MOS Technology General Description AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These...
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Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6800WS 30V N-Channel Enhancement Mode MOSFET Features 30V/4.0A,RDS(ON)=34mΩ@VGS=10V 30V/3.2A,RDS(ON)=38mΩ@VGS=4.5V 30V/2.5A,RDS(ON)=42mΩ@VGS=2.
AFN6800WS Datasheet
