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AFN6802WS - N-Channel MOSFET

This page provides the datasheet information for the AFN6802WS, a member of the AFN6802WS-Alfa N-Channel MOSFET family.

Description

AFN6802WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/4.0A,RDS(ON)=28mΩ@VGS=10V 30V/2.8A,RDS(ON)=32mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design.

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Datasheet Details

Part number AFN6802WS
Manufacturer Alfa-MOS
File Size 697.54 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6802WS Datasheet
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Alfa-MOS Technology General Description AFN6802WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6802WS 30V N-Channel Enhancement Mode MOSFET Features 30V/4.0A,RDS(ON)=28mΩ@VGS=10V 30V/2.8A,RDS(ON)=32mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Ordering Information Part Ordering No.
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