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AFN6820 - N-Channel MOSFET

This page provides the datasheet information for the AFN6820, a member of the AFN6820-Alfa N-Channel MOSFET family.

Description

AFN6820, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 20V/3.4A,RDS(ON)=58mΩ@VGS=4.5V 20V/3.0A,RDS(ON)=68mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=88mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TSOP-6 package design.

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Datasheet preview – AFN6820

Datasheet Details

Part number AFN6820
Manufacturer Alfa-MOS
File Size 582.51 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6820 Datasheet
Additional preview pages of the AFN6820 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN6820, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6820 20V N-Channel Enhancement Mode MOSFET Features 20V/3.4A,RDS(ON)=58mΩ@VGS=4.5V 20V/3.0A,RDS(ON)=68mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=88mΩ@VGS=1.
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