AFN6820 Datasheet | Alfa-MOS

Description AFN6820, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 20V N-Channel Enhancement Mode MOSFET Features 20V/3.4A,RDS(ON)=58mΩ@VGS=4.5V 20V/3.0A,RDS(ON)=68mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=88mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel PPin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Ordering Information Part Ordering No. Part Marking Package AFN6820TS6RG 20YW TSOP-6 ϡʳ 20 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN6820TS6RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A July 2010 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 20V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25к Unless otherwise noted) Drain-Source Voltage Gate - Source Voltage Parameter...